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Zeitschrift für Analysis und ihre Anwendungen


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Volume 10, Issue 1, 1991, pp. 43–48
DOI: 10.4171/ZAA/429

Published online: 1991-03-31

On a Free Boundary Problem Modelling Thermal Oxidation of Silicon

Guan Zhicheng[1]

(1) Zhejiang University, Hangzhou, China

Considering the problem modelling thermal oxidation of silicon as one-phase non-equilibrium problem, we use Schauder’s fixed point theorem to prove the existence and uniqueness of the classical solution.

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Zhicheng Guan: On a Free Boundary Problem Modelling Thermal Oxidation of Silicon. Z. Anal. Anwend. 10 (1991), 43-48. doi: 10.4171/ZAA/429